Lateral source field-plated β-Ga2O3 MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm2. (9th October 2019)

• Record Type: Journal Article
• Authors: Lv, Yuanjie; Zhou, Xingye; Long, Shibing; Liang, Shixiong; Song, Xubo; Zhou, Xuanze; Dong, Hang; Wang, Yuangang; Feng, Zhihong; Cai, Shujun
• Is Part Of: Semiconductor science and technology. Volume 34:Number 11(2019)
• Publication Date: 2019-10-09
• Subjects: Ga2O3 MOSFET -- source field plate -- breakdown voltage -- power figure of merit (PFoM); Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ab4214
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In this letter, lateral β -Ga2 O3 MOSFETs with source field plate are fabricated on Si-doped homoepitaxial film on (010) Fe-doped semi-insulating β -Ga2 O3 substrate. The drain extension in the source field plate effectively suppresses the peak electric field in the Ga2 O3 channel, and improves the breakdown voltage greatly. Moreover, fluorinert FC-770 is used to reduce air breakdown potential during the breakdown testing. The breakdown voltage of the device with L sd of 28 μ m is measured as high as 2360 V, which is the highest value in reported lateral Ga2 O3 MOSFET. Besides, Si-ion implantation is adopted to reduce the ohmic contact resistance ( R c ). The value of specific on-resistance ( R on, sp ) is calculated to be 560 mΩ cm 2, which is a recorded value under such high breakdown voltage, and also lower than the theoretical limit of Si-based power devices under the same breakdown voltage.