Lateral AlGaN/GaN diode with MIS‐gated hybrid anode for high‐sensitivity zero‐bias microwave detection. Issue 23 (1st November 2015)

• Record Type: Journal Article
• Authors: Zhou, Qi; Liu, Li; Zhou, Xingye; Zhang, Anbang; Shi, Yuanyuan; Wang, Zeheng; Wang, Yuan Gang; Fang, Yulong; Lv, Yuanjie; Feng, Zhihong; Zhang, Bo
• Is Part Of: Electronics letters. Volume 51:Issue 23(2015)
• Page Start: 1889
• Page End: 1891
• Publication Date: 2015-11-01
• Subjects: semiconductor diodes -- aluminium compounds -- gallium compounds -- III‐V semiconductors -- wide band gap semiconductors -- anodes -- sensitivity analysis -- microwave detectors -- silicon -- MIS devices; lateral diode -- MIS‐gated hybrid anode -- high‐sensitivity zero‐bias microwave detector -- MG‐HAD -- turn‐on voltage -- threshold‐voltage -- 2DEG channel -- device nonlinearity -- gate recessing -- first‐order voltage sensitivity -- AlGaN‐GaN -- Al2O3 -- Si; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.2885
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A zero‐bias microwave detector using an AlGaN/GaN‐on‐Si lateral diode featuring a recessed metal/Al2 O3 /III‐nitride (MIS) gated hybrid anode (MG‐HAD) is experimentally demonstrated. The forward turn‐on voltage of the MG‐HAD is determined by the threshold‐voltage of the 2DEG channel beneath the recessed MIS‐gate, and thus the nonlinearity of the device at zero bias can be flexibly modulated by gate recessing. The optimal trench depth of the MIS‐gate for zero‐bias detection was designed and experimentally determined to be ∼23 nm, which enables a high‐curvature coefficient of 78 V −1 at zero bias. The first‐order voltage sensitivity, β V, is as high as 7.8 mV/μW. To the best of the authors' knowledge, these values are the highest reported for GaN‐based zero‐bias detectors to date.