Author/Creator: Zhao, Q.T. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Zhao, Q.T.

1. Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3%. (June 2015)

Authors:: Luong, G.V.; Knoll, L.; Blaeser, S.; Süess, M.J.; Sigg, H.; Schäfer, A.; Trellenkamp, S.; Bourdelle, K.K.; Buca, D.; Zhao, Q.T.; Mantl, S.
Journal:: Solid-state electronics
Issue:: Volume 108(2015)
Page Start:: 19
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

2. Design and simulation study of ultra-fast beam bunches split for three orthogonal planes high-energy electron dynamic radiography. (14th September 2017)

Authors:: Zhao, Q.T.; Cao, S.C.; Shen, X.K.; Wang, Y.R.; Zong, Y.; Xiao, J.H.; Zhu, Y.L.; Zhou, Y.W.; Liu, M.; Cheng, R.; Zhao, Y.T.; Zhang, Z.M.; Gai, W.
Journal:: Laser and particle beams
Issue:: Volume 35:Number 4(2017)
Page Start:: 579
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

3. Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages. (January 2016)

Authors:: Luong, G.V.; Strangio, S.; Tiedemannn, A.; Lenk, S.; Trellenkamp, S.; Bourdelle, K.K.; Zhao, Q.T.; Mantl, S.
Journal:: Solid-state electronics
Issue:: Volume 115 Part B(2016)
Page Start:: 152
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

4. Generation of uniform transverse beam distributions for high-energy electron radiography. (18th September 2018)

Authors:: Zhao, Q.T.; Cao, S.C.; Cheng, R.; Du, Y.C.; Shen, X.K.; Wang, Y.R.; Xiao, J.H.; Zong, Y.; Zhu, Y.L.; Zhou, Y.W.; Zhao, Y.T.; Zhang, Z.M.; Gai, W.
Journal:: Laser and particle beams
Issue:: Volume 36:Number 3(2018)
Page Start:: 313
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

5. Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity. (June 2015)

Authors:: Richter, S.; Trellenkamp, S.; Schäfer, A.; Hartmann, J.M.; Bourdelle, K.K.; Zhao, Q.T.; Mantl, S.
Journal:: Solid-state electronics
Issue:: Volume 108(2015)
Page Start:: 97
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

6. Process modules for GeSn nanoelectronics with high Sn-contents. (February 2017)

Authors:: Schulte-Braucks, C.; Glass, S.; Hofmann, E.; Stange, D.; von den Driesch, N.; Hartmann, J.M.; Ikonic, Z.; Zhao, Q.T.; Buca, D.; Mantl, S.
Journal:: Solid-state electronics
Issue:: Volume 128(2017)
Page Start:: 54
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

7. Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents. (May 2018)

Authors:: Narimani, K.; Glass, S.; Bernardy, P.; von den Driesch, N.; Zhao, Q.T.; Mantl, S.
Journal:: Solid-state electronics
Issue:: Volume 143(2018)
Page Start:: 62
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

8. Superconducting platinum silicide for electron cooling in silicon. (January 2015)

Authors:: Prest, M.J.; Richardson-Bullock, J.S.; Zhao, Q.T.; Muhonen, J.T.; Gunnarsson, D.; Prunnila, M.; Shah, V.A.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.
Journal:: Solid-state electronics
Issue:: Volume 103(2015)
Page Start:: 15
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗