1. A comprehensive evaluation of radiation hardening by applying negative body bias and back-gate bias in 130 nm PDSOI technology. (February 2020) Authors: Xie, Xin; Zhu, Huilong; Bi, Dawei; Hu, Zhiyuan; Ren, JiangChuan; Zhang, Haineng; Zhang, Zhengxuan; Zou, Shichang Journal: Microelectronics and reliability Issue: Volume 105(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A high power CMOS cascode power amplifier with adaptive dynamic bias control for linearity enhancement. Issue 7 (29th February 2020) Authors: Ren, Jiangchuan; Dai, Ruofan; He, Jun; Zhang, Zhengxuan; Zou, Shichang Journal: Microwave and optical technology letters Issue: Volume 62:Issue 7(2020:Jul.) Page Start: 2451 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. An energy‐efficient level shifter based on a differential cascade voltage switch structure. (3rd October 2022) Authors: Zhang, Haineng; Liu, Zhongyang; Bi, Dawei; Zhang, Zhengxuan; Xiao, Zhiyi; Dai, Ruofan Journal: International journal of circuit theory and applications Issue: Volume 51:Number 2(2023) Page Start: 955 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs. (January 2016) Authors: Fan, Shuang; Ning, Bingxu; Hu, Zhiyuan; Zhang, Zhengxuan; Bi, Dawei; Peng, Chao; Song, Lei; Dai, Lihua Journal: Microelectronics and reliability Issue: Volume 56(2016) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs. (January 2016) Authors: Fan, Shuang; Ning, Bingxu; Hu, Zhiyuan; Zhang, Zhengxuan; Bi, Dawei; Peng, Chao; Song, Lei; Dai, Lihua Journal: Microelectronics and reliability Issue: Volume 56(2016) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs. (July 2017) Authors: Dai, Lihua; Liu, Xiaonian; Zhang, Mengying; Zhang, Leqing; Hu, Zhiyuan; Bi, Dawei; Zhang, Zhengxuan; Zou, Shichang Journal: Microelectronics and reliability Issue: Volume 74(2017) Page Start: 74 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Hardening silicon-on-insulator nMOSFETs by multiple-step Si+ implantation. (February 2016) Authors: Huang, Huixiang; Huang, YanYang; Zheng, Jiachun; Wei, Sufen; Tang, Kai; Bi, Dawei; Zhang, Zhengxuan Journal: Microelectronics and reliability Issue: Volume 57(2016) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. High-performance and highly-stable soft error resistant 12T SRAM cell for space applications. (February 2023) Authors: Liu, Zhongyang; Zhang, Haineng; Xie, Yuqiao; Bi, Dawei; Hu, Zhiyuan; Zou, Shichang; Zhang, Zhengxuan Journal: Microelectronics and reliability Issue: Volume 141(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. High‐performance and single event double‐upset‐immune latch design. Issue 23 (6th October 2020) Authors: Zhang, Haineng; Liu, Zhongyang; Jiang, Jianwei; Xiao, Jun; Zhang, Zhengxuan; Zou, Shichang Journal: Electronics letters Issue: Volume 56:Issue 23(2020) Page Start: 1243 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology. (July 2017) Authors: Song, Lei; Hu, Zhiyuan; Zhang, Mengying; Liu, Xiaonian; Dai, Lihua; Zhang, Zhengxuan; Zou, Shichang Journal: Microelectronics and reliability Issue: Volume 74(2017) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗