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3. Characterization of semipolar {11$ \bar 2 $2} light‐emitting diodes using a hole blocking layer. Issue 3 (17th February 2014)

4. Crystalline property analysis of semipolar (20–21) GaN on (22–43) patterned sapphire substrate by X‐ray microdiffraction and transmission electron microscopy. Issue 5 (4th February 2015)

5. Epitaxial lateral overgrowth of thick semipolar {11$ \bar 2 $2} GaN by hydride vapor phase epitaxy. Issue 3 (4th February 2014)

6. Fabrication of freestanding {20$ \bar 2 $1} GaN substrates by HVPE using SiO2 masked GaN templates. Issue 3 (20th February 2014)

8. GaN‐Based Monolithic Inverter Consisting of Enhancement‐ and Depletion‐Mode MOSFETs by Si Ion Implantation. Issue 3 (6th November 2019)