GaN‐Based Monolithic Inverter Consisting of Enhancement‐ and Depletion‐Mode MOSFETs by Si Ion Implantation. Issue 3 (6th November 2019)

• Record Type: Journal Article
• Authors: Okada, Hiroshi; Miwa, Kiyomasa; Yokoyama, Taichi; Yamane, Keisuke; Wakahara, Akihiro; Sekiguchi, Hiroto
• Other Names: Tanaka Masaaki guestEditor.; Sugiyama Masakazu guestEditor.; Fujii Takuro guestEditor.; Ohya Shinobu guestEditor.
• Is Part Of: Physica status solidi. Volume 217:Issue 3(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-11-06
• Subjects: GaN -- integrated circuits -- inverters -- ion implantation -- MOSFETs; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900550
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Herein, the effects of Si ion implantation on GaN in a dose range of 10 11 –10 14 cm − 2 towards a GaN‐based monolithic inverter circuit consisting of n‐channel enhancement‐ and depletion‐mode MOSFETs (E‐MOSFET and D‐MOSFET) are investigated. The implantation dose dependence is investigated by capacitance–voltage ( C–V ) measurement of Si‐implanted GaN metal–oxide–semiconductor (MOS) capacitors. Enhanced stretches of C–V curve in voltage bias direction in higher dose samples and its nonlinear dependence on Si dose are discussed. Characteristics of E‐ and D‐MOSFET fabricated on p‐GaN with Mg doping concentration of [ Mg ] = 1 × 10 19 cm − 3 on sapphire substrate are presented. The operation of E‐ and D‐MOSFET with normally‐on and normally‐off characteristics is obtained. To further improve MOSFET characteristics, a low Mg concentration p‐GaN layer with [Mg] of 1×10 17 cm −3 on GaN substrate is used for monolithic E‐ and D‐MOSFET fabrication. Improved E‐MOSFET characteristics are confirmed by effective mobility of 38 cm 2 (V s) −1 . The successful operation of an enhancement/depletion (E/D)‐type inverter with a maximum voltage gain 1.5 beyond unity is presented in monolithic E‐ and D‐MOSFET on the same chip. Abstract : The successful operation of an enhancement/depletion (E/D)‐type inverter consisting of n‐channel enhancement‐ and depletion‐mode MOSFETs (E‐MOSFET and D‐MOSFET) fabricated on a low Mg concentration p‐GaN layer on GaN substrate with a maximum voltage gain 1.5 beyond unity is presented. Study of Si ion‐implantation effects on GaN for GaN‐based monolithic inverter is also reported.