Epitaxial lateral overgrowth of thick semipolar {11$ \bar 2 $2} GaN by hydride vapor phase epitaxy. Issue 3 (4th February 2014)

• Record Type: Journal Article
• Authors: Hashimoto, Yasuhiro; Furuya, Hiroshi; Ueno, Motohisa; Yamane, Keisuke; Okada, Narihito; Tadatomo, Kazuyuki
• Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 11:Issue 3/4(2014:Apr.)
• Page Start: 549
• Page End: 552
• Publication Date: 2014-02-04
• Subjects: GaN -- HVPE -- semipolar -- ELO -- crack -- surface morphology -- dislocation; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300483
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: A thick semipolar {11–22} GaN layer was grown on m ‐plane sapphire substrates by hydride vapor phase epitaxy (HVPE). We succeeded in using epitaxial lateral overgrowth (ELO) with a striped SiO2 mask to suppress crack generation, improve the flatness, and reduce the dark spot density in the semipolar {11–22} GaN layer. The ELO was performed at a growth rate of over 100 µm/h, and it was found that ELO using a SiO2 mask could be used to achieve high‐growth rate HVPE. Large hillocks were eliminated by using ELO. The dark spot density of the 2 mm {11–22} GaN layer grown by ELO was 2.7 × 10 7 cm –2, which was one digit lower than that of a conventional GaN layer. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)