Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices. (6th April 2016)

• Record Type: Journal Article
• Authors: Tsuchiyama, Kazuaki; Yamane, Keisuke; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 5(2016:May)Supplement
• Publication Date: 2016-04-06
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.05FL01
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: A Si/SiO2 /GaN-light-emitting-diode (LED) wafer is proposed as a new structure for the monolithic integration of both Si circuits and GaN-based optical devices. Surface-activated bonding was performed to transfer a Si layer from a silicon-on-insulator substrate to a SiO2 /GaN-LED substrate. Transmission electron microscopy observation revealed that a defect-free Si layer was formed on the SiO2 /GaN-LED substrate without interfacial voids. The crystalline quality of the Si layer, which is characterized by an X-ray rocking curve, was markedly improved by flattening the SiO2 /GaN-LED substrate before bonding. Finally, a micro-LED array was successfully fabricated on the Si/SiO2 /GaN-LED wafer without the delamination of the Si layer.