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2. (Invited) Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. (1st August 2017)

3. (Invited) Generation-Recombination Noise in Advanced CMOS Devices. (19th August 2016)

4. (Invited) Heterogeneous Nano- to Wide-Scale Co-Integration of Beyond-Si and Si CMOS Devices to Enhance Future Electronics. (31st March 2015)

5. (Invited) Processing Technologies for Advanced Ge Devices. (18th August 2016)

7. (Invited) Selective Etch of Si and SiGe for Gate All-Around Device Architecture. (11th September 2015)

8. (Plenary) The Revival of Compound Semiconductors and How They Will Change the World in a 5G/6G Era. (8th September 2020)

9. Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment. (22nd February 2019)