(Invited) Advanced Semiconductor Devices for Future CMOS Technologies. (27th March 2015)

• Record Type: Journal Article
• Authors: Claeys, Cor; Chiappe, Danielle; Collaert, Nadine; Mitard, Jerome; Radu, Juliana; Rooyackers, Rita; Simoen, Eddy; Vandooren, Anne; Veloso, Anabela; Waldron, Niamh; Witters, Liesbeth; Thean, Aaron
• Is Part Of: ECS transactions. Volume 66:Number 5(2015)
• Page Start: 49
• Page End: 60
• Publication Date: 2015-03-27
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06605.0049ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Device scaling for higher performance and lower power consumption requires the introduction of advanced process modules, new materials new device architectures and finally even the use of alternative device operation principles compared to the standard MOS transistor. Several of these advanced devices will be discussed in view of their scalability and their potential for coping with the ITRS roadmap. Key performance parameters will be investigated.