1. Continuous and symmetric trans-capacitance compact model for triple-gate junctionless MOSFETs. (January 2021) Authors: Oproglidis, T.A.; Tsormpatzoglou, A.; Tassis, D.H.; Theodorou, C.G.; Ghibaudo, G.; Dimitriadis, C.A. Journal: Solid-state electronics Issue: Volume 175(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Drain current local variability from linear to saturation region in 28 nm bulk NMOSFETs. (February 2017) Authors: Karatsori, T.A.; Theodorou, C.G.; Haendler, S.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 128(2017) Page Start: 31 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction. (September 2015) Authors: Karatsori, T.A.; Theodorou, C.G.; Ioannidis, E.G.; Haendler, S.; Josse, E.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 111(2015) Page Start: 123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction. (September 2015) Authors: Karatsori, T.A.; Theodorou, C.G.; Ioannidis, E.G.; Haendler, S.; Josse, E.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 111(2015) Page Start: 123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators. (January 2016) Authors: Messaris, I.; Karatsori, T.A.; Fasarakis, N.; Theodorou, C.G.; Nikolaidis, S.; Ghibaudo, G.; Dimitriadis, C.A. Journal: Microelectronics and reliability Issue: Volume 56(2016) Page Start: 10 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators. (January 2016) Authors: Messaris, I.; Karatsori, T.A.; Fasarakis, N.; Theodorou, C.G.; Nikolaidis, S.; Ghibaudo, G.; Dimitriadis, C.A. Journal: Microelectronics and reliability Issue: Volume 56(2016) Page Start: 10 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Impact of low‐frequency noise variability on statistical parameter extraction in ultra‐scaled CMOS devices. Issue 19 (1st September 2014) Authors: Ioannidis, E.G.; Theodorou, C.G.; Haendler, S.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Electronics letters Issue: Volume 50:Issue 19(2014) Page Start: 1393 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Influence of AC signal oscillator level on effective mobility measurement by split C–V technique in MOSFETs. Issue 17 (1st August 2016) Authors: Karatsori, T.A.; Theodorou, C.G.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Electronics letters Issue: Volume 52:Issue 17(2016) Page Start: 1492 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature. (March 2016) Authors: Theodorou, C.G.; Ioannidis, E.G.; Haendler, S.; Josse, E.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 117(2016) Page Start: 88 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature. (March 2016) Authors: Theodorou, C.G.; Ioannidis, E.G.; Haendler, S.; Josse, E.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 117(2016) Page Start: 88 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗