11. Deep Level Assessment of n-Type Si/SiO2 Metal-Oxide-Semiconductor Capacitors with Embedded Ge Quantum Dots. (5th January 2018) Authors: Aouassa, M.; Vrielinck, H.; Simoen, E. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 2(2018) Page Start: P24 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
12. Deep Levels in W-Doped Czochralski Silicon. (1st January 2016) Authors: Simoen, E.; Saga, K.; Vrielinck, H.; Lauwaert, J. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 4(2016) Page Start: P3001 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
13. Deep Levels in W-Doped Czochralski Silicon. (5th October 2015) Authors: Simoen, E.; Saga, K.; Vrielinck, H.; Lauwaert, J. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 4(2016) Page Start: P3001 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
14. Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures. (May 2018) Authors: Boudier, D.; Cretu, B.; Simoen, E.; Veloso, A.; Collaert, N. Journal: Solid-state electronics Issue: Volume 143(2018) Page Start: 27 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
15. Detailed low frequency noise assessment on GAA NW n-channel FETs. (August 2021) Authors: Cretu, B.; Bordin, A.; Simoen, E.; Hellings, G.; Linten, D.; Claeys, C. Journal: Solid-state electronics Issue: Volume 181/182(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
16. Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs. (January 2015) Authors: Bühler, R.T.; Agopian, P.G.D.; Collaert, N.; Simoen, E.; Claeys, C.; Martino, J.A. Journal: Solid-state electronics Issue: Volume 103(2015) Page Start: 209 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
17. Electrical Activity of Extended Defects in Relaxed InxGa1−xAs Hetero-Epitaxial Layers. (19th February 2020) Authors: Claeys, C.; Hsu, P.-C.; Mols, Y.; Han, H.; Bender, H.; Seidel, F.; Carolan, P.; Merckling, C.; Alian, A.; Waldron, N.; Eneman, G.; Collaert, N.; Heyns, M.; Simoen, E. Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 3(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
18. Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes. (August 2015) Authors: Baert, B.; Gupta, S.; Gencarelli, F.; Loo, R.; Simoen, E.; Nguyen, N.D. Journal: Solid-state electronics Issue: Volume 110(2015) Page Start: 65 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
19. Enhanced dynamic threshold voltage UTBB SOI nMOSFETs. (October 2015) Authors: Sasaki, K.R.A.; Manini, M.B.; Simoen, E.; Claeys, C.; Martino, J.A. Journal: Solid-state electronics Issue: Volume 112(2015) Page Start: 19 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
20. Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C. (November 2021) Authors: Agopian, P.G.D.; Carmo, G.J.; Martino, J.A.; Simoen, E.; Peralagu, U.; Parvais, B.; Waldron, N.; Collaert, N. Journal: Solid-state electronics Issue: Volume 185(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗