Deep Levels in W-Doped Czochralski Silicon. (1st January 2016)

• Record Type: Journal Article
• Authors: Simoen, E.; Saga, K.; Vrielinck, H.; Lauwaert, J.
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 4(2016)
• Page Start: P3001
• Page End: P3007
• Publication Date: 2016-01-01
• Subjects: Cz silicon -- deep level transient spectroscopy -- leakage current -- tungsten; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0011604jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The deep levels introduced by W diffusion at 950°C in p- and n-type Czochralski silicon have been studied by Deep-Level Transient Spectroscopy (DLTS). It is shown that in p-type Si, two prominent hole traps are present, one around mid-gap, showing a steeply decaying concentration profile within 1 μm from the surface and a second center with activation energy of 0.409 eV above the valence band, exhibiting a rather flat profile beyond 0.4 μm from the surface. In n-type Si, a small peak has been consistently found, which most likely corresponds with the 0.22 eV W-related electron trap previously reported in the literature.