1. (Invited) New Approaches for Shrinking the Performance Gap for GaN Power Devices. (17th August 2017) Authors: Shur, Michael; Simin, Grigory Journal: ECS transactions Issue: Volume 80:Number 7(2017) Page Start: 147 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Power Loss Reduction in Perforated-Channel HFET Switches. (13th April 2015) Authors: Shur, Michael; Gaevski, Mikhail; Gaska, Remis; Simin, Grigory; Wong, Hugh Yung; Braga, Nelson; Mickevicius, Rimvydas Journal: ECS transactions Issue: Volume 66:Number 1(2015) Page Start: 179 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices. Issue 7 (13th January 2020) Authors: Floyd, Richard; Hussain, Kamal; Mamun, Abdullah; Gaevski, Mikhail; Simin, Grigory; Chandrashekhar, MVS; Khan, Asif Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays. (17th December 2020) Authors: Floyd, Richard; Gaevski, Mikhail; Alam, Md Didarul; Islam, Samia; Hussain, Kamal; Mamun, Abdullah; Mollah, Shahab; Simin, Grigory; Chandrashekhar, MVS; Khan, Asif Journal: Applied physics express Issue: Volume 14:Number 1(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Current collapse in high-Al channel AlGaN HFETs. (5th June 2019) Authors: Mollah, Shahab; Gaevski, Mikhail; Hussain, Kamal; Mamun, Abdullah; Floyd, Richard; Hu, Xuhong; Chandrashekhar, M V S; Simin, Grigory; Khan, Asif Journal: Applied physics express Issue: Volume 12:Number 7(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes. (15th July 2021) Authors: Floyd, Richard; Gaevski, Mikhail; Hussain, Kamal; Mamun, Abdullah; Chandrashekhar, MVS; Simin, Grigory; Khan, Asif Journal: Applied physics express Issue: Volume 14:Number 8(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. GaN microwave varactors with insulated electrodes. Issue 3 (20th March 2014) Authors: Gaevski, Mikhail; Deng, Jianyu; Gaska, Remis; Shur, Michael; Simin, Grigory Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor. Journal: Physica status solidi Issue: Volume 11:Issue 3/4(2014:Apr.) Page Start: 853 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. High figure of merit extreme bandgap Al0.87Ga0.13N-Al0.64Ga0.36N heterostructures over bulk AlN substrates. (1st January 2023) Authors: Hussain, Kamal; Mamun, Abdullah; Floyd, Richard; Alam, Md Didarul; Liao, Michael E.; Huynh, Kenny; Wang, Yekan; Goorsky, Mark; Chandrashekhar, MVS; Simin, Grigory; Khan, Asif Journal: Applied physics express Issue: Volume 16:Number 1(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. High-current recessed gate enhancement-mode ultrawide bandgap AlxGa1−xN channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V. (7th January 2021) Authors: Mollah, Shahab; Hussain, Kamal; Mamun, Abdullah; Gaevski, Mikhail; Simin, Grigory; Chandrashekhar, MVS; Khan, Asif Journal: Applied physics express Issue: Volume 14:Number 1(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides. Issue 7 (7th February 2020) Authors: Mollah, Shahab; Hussain, Kamal; Floyd, Richard; Mamun, Abdullah; Gaevski, Mikhail; Chandrashekhar, MVS; Ahmad, Iftikhar; Simin, Grigory; Wheeler, Virginia; Eddy, Charles; Khan, Asif Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗