1. (Invited) Probing the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic Simulations. (16th August 2017) Authors: Pourtois, Geoffrey; Dabral, Ashish; Sankaran, Kiroubanand; Magnus, Wim; Yu, Hao; de Jamblinne de Meux, Albert; Lu, Anh Khoa Augustin; Clima, Sergiu; Stokbro, Kurt; Schaekers, Marc; Houssa, Michel; Collaert, Nadine; Horiguchi, Naoto Journal: ECS transactions Issue: Volume 80:Number 1(2017) Page Start: 303 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration. (20th July 2018) Authors: Porret, Clement; Hikavyy, Andriy Yakovitch; Gomez Granados, Juan Fernando; Baudot, Sylvain; Vohra, Anurag; Kunert, Bernardette; Douhard, Bastien; Bogdanowicz, Janusz; Schaekers, Marc; Kohen, David; Margetis, Joe; Tolle, John; Lima, Lucas; Sammak, Amir; Scappucci, Giordano; Rosseel, Erik; Langer, ... Journal: ECS transactions Issue: Volume 86:Number 7(2018) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Atomic layer deposition of ruthenium at 100 °C using the RuO4-precursor and H2. Issue 1 (10th November 2014) Authors: Minjauw, Matthias M.; Dendooven, Jolien; Capon, Boris; Schaekers, Marc; Detavernier, Christophe Journal: Journal of materials chemistry Issue: Volume 3:Issue 1(2015) Page Start: 132 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Atomic layer deposition of ruthenium at 100 °C using the RuO4-precursor and H2. Issue 1 (10th November 2014) Authors: Minjauw, Matthias M.; Dendooven, Jolien; Capon, Boris; Schaekers, Marc; Detavernier, Christophe Journal: Journal of materials chemistry Issue: Volume 3:Issue 1(2015) Page Start: 132 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Defect engineering for shallow n‐type junctions in germanium: Facts and fiction. Issue 11 (18th July 2016) Authors: Simoen, Eddy; Schaekers, Marc; Liu, Jinbiao; Luo, Jun; Zhao, Chao; Barla, Kathy; Collaert, Nadine Journal: Physica status solidi Issue: Volume 213:Issue 11(2016:Nov.) Page Start: 2799 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment. (22nd February 2019) Authors: Vohra, Anurag; Porret, Clement; Kohen, David; Folkersma, Steven; Bogdanowicz, Janusz; Schaekers, Marc; Tolle, John; Hikavyy, Andriy; Capogreco, Elena; Witters, Liesbeth; Langer, Robert; Vandervorst, Wilfried; Loo, Roger Journal: Japanese journal of applied physics Issue: Volume 58:Number SB(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control. (15th December 2014) Authors: Peter, Antony P.; Martens, Koen; Rampelberg, Geert; Toeller, Michael; Ablett, James M.; Meersschaut, Johan; Cuypers, Daniel; Franquet, Alexis; Detavernier, Christophe; Rueff, Jean‐Pascal; Schaekers, Marc; Van Elshocht, Sven; Jurczak, Malgorzata; Adelmann, Christoph; Radu, Iuliana P. Journal: Advanced functional materials Issue: Volume 25:Number 5(2015) Page Start: 679 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma. Issue 19 (21st May 2015) Authors: Minjauw, Matthias M.; Dendooven, Jolien; Capon, Boris; Schaekers, Marc; Detavernier, Christophe Journal: Journal of materials chemistry Issue: Volume 3:Issue 19(2015) Page Start: 4848 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗