Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control. (15th December 2014)

• Record Type: Journal Article
• Authors: Peter, Antony P.; Martens, Koen; Rampelberg, Geert; Toeller, Michael; Ablett, James M.; Meersschaut, Johan; Cuypers, Daniel; Franquet, Alexis; Detavernier, Christophe; Rueff, Jean‐Pascal; Schaekers, Marc; Van Elshocht, Sven; Jurczak, Malgorzata; Adelmann, Christoph; Radu, Iuliana P.
• Is Part Of: Advanced functional materials. Volume 25:Number 5(2015)
• Page Start: 679
• Page End: 686
• Publication Date: 2014-12-15
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201402687
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Nanoscale morphology of vanadium dioxide (VO₂) films can be controlled to realize smooth ultrathin (&lt;10 nm) crystalline films or nanoparticles with atomic layer deposition, opening doors to practical VO₂ metal‐insulator transition (MIT) nanoelectronics. The precursor combination, the valence of V, and the density for as‐deposited VO₂ films, as well as the postdeposition crystallization annealing conditions determine whether a continuous thin film or nanoparticle morphology is obtained. It is demonstrated that the films and particles possess both a structural and an electronic transition. The resistivity of ultrathin films changes by more than two orders of magnitude across the MIT, demonstrating their high quality.</p> </abstract>