Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma. Issue 19 (21st May 2015)

• Record Type: Journal Article
• Authors: Minjauw, Matthias M.; Dendooven, Jolien; Capon, Boris; Schaekers, Marc; Detavernier, Christophe
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 19(2015)
• Page Start: 4848
• Page End: 4851
• Publication Date: 2015-05-21
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5tc00751h
• Languages: English
• ISSNs: 2050-7526

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgjn30k2zc" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />A plasma enhanced ALD process for Ru using RuO₄ and H₂-plasma is reported at sample temperatures ranging from 50 °C to 100 °C.</p> </abstract>