1. A self-limiting layer-by-layer etching technique for 2H-MoS2. (7th February 2017) Authors: Lee, Choong Hee; Lee, Edwin W.; McCulloch, William; Jamal-Eddine, Zane; Krishnamoorthy, Sriram; Newburger, Michael J; Kawakami, Roland K.; Wu, Yiying; Rajan, Siddharth Journal: Applied physics express Issue: Volume 10:Number 3(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors. (February 2020) Authors: Xue, Hao; Hwang, Seongmo; Razzak, Towhidur; Lee, Choonghee; Calderon Ortiz, Gabriel; Xia, Zhanbo; Hasan Sohel, Shahadat; Hwang, Jinwoo; Rajan, Siddharth; Khan, Asif; Lu, Wu Journal: Solid-state electronics Issue: Volume 164(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions. (29th January 2021) Authors: Hasan, Syed M N; Gunning, Brendan P; J.-Eddine, Zane; Chandrasekar, Hareesh; Crawford, Mary H; Armstrong, Andrew; Rajan, Siddharth; Arafin, Shamsul Journal: Journal of physics Issue: Volume 54:Number 15(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Deep level defects in N-rich and In-rich InxGa1−XN: in composition dependence. (November 2016) Authors: Gür, Emre; Akyol, Fatih; Krishnamoorthy, Sriram; Rajan, Siddharth; Ringel, Steven A. Journal: Superlattices and microstructures Issue: Volume 99(2016) Page Start: 67 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Delta-doped β-gallium oxide field-effect transistor. (18th April 2017) Authors: Krishnamoorthy, Sriram; Xia, Zhanbo; Bajaj, Sanyam; Brenner, Mark; Rajan, Siddharth Journal: Applied physics express Issue: Volume 10:Number 5(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates. (12th July 2020) Authors: Chandrasekar, Hareesh; Razzak, Towhidur; Wang, Caiyu; Reyes, Zeltzin; Majumdar, Kausik; Rajan, Siddharth Journal: Advanced Electronic Materials Issue: Volume 6:Number 8(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector. (22nd May 2018) Authors: Pratiyush, Anamika Singh; Krishnamoorthy, Sriram; Kumar, Sandeep; Xia, Zhanbo; Muralidharan, Rangarajan; Rajan, Siddharth; Nath, Digbijoy N. Journal: Japanese journal of applied physics Issue: Volume 57:Number 6(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Design of AlGaN-based lasers with a buried tunnel junction for sub-300 nm emission. (12th June 2019) Authors: Arafin, Shamsul; Hasan, Syed M N; Jamal-Eddine, Zane; Wickramaratne, Darshana; Paul, Banaful; Rajan, Siddharth Journal: Semiconductor science and technology Issue: Volume 34:Number 7(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V. Issue 6 (17th February 2021) Authors: Xue, Hao; Hussain, Kamal; Talesara, Vishank; Razzak, Towhidur; Gaevski, Mikhail; Mollah, Shahab; Rajan, Siddharth; Khan, Asif; Lu, Wu Journal: Physica status solidi Issue: Volume 15:Issue 6(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs. (18th August 2021) Authors: Jamal-Eddine, Zane; Gunning, Brendan P.; Armstrong, Andrew A.; Rajan, Siddharth Journal: Applied physics express Issue: Volume 14:Number 9(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗