Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs. (18th August 2021)

• Record Type: Journal Article
• Authors: Jamal-Eddine, Zane; Gunning, Brendan P.; Armstrong, Andrew A.; Rajan, Siddharth
• Is Part Of: Applied physics express. Volume 14:Number 9(2021)
• Publication Date: 2021-08-18
• Subjects: tunnel junction -- cascaded LED -- multi-junction LED -- tunnel junction optoelectronics -- heterojunction tunnel junction -- multi-active region LED; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac1981
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. This work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.