All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions. (29th January 2021)

• Record Type: Journal Article
• Authors: Hasan, Syed M N; Gunning, Brendan P; J.-Eddine, Zane; Chandrasekar, Hareesh; Crawford, Mary H; Armstrong, Andrew; Rajan, Siddharth; Arafin, Shamsul
• Is Part Of: Journal of physics. Volume 54:Number 15(2021)
• Publication Date: 2021-01-29
• Subjects: GaN -- tunnel junction -- MOCVD -- delta dose -- activation; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/abdb0f
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: We carefully investigate three important effects including postgrowth activation annealing, delta ( δ ) dose and magnesium (Mg) buildup delay as well as experimentally demonstrate their influence on the electrical properties of GaN homojunction p–n diodes with a tunnel junction (TJ). The diodes were monolithically grown by metalorganic chemical vapor deposition (MOCVD) in a single growth step. By optimizing the annealing parameters for Mg activation, δ -dose for both donors and acceptors at TJ interfaces, and p + -GaN layer thickness, a significant improvement in tunneling properties is achieved. For the TJs embedded within the continuously-grown, all-MOCVD GaN diode structures, ultra-low voltage penalties of 158 mV and 490 mV are obtained at current densities of 20 A cm −2 and 100 A cm −2, respectively. The diodes with the engineered TJs show a record-low differential resistivity of 1.6 × 10 −4 Ω cm 2 at 5 kA cm −2 .