1. A Compact Noise Model for C-CNTFETs. (1st January 2017) Authors: Marani, R.; Gelao, G.; Perri, A. G. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 4(2017) Page Start: M44 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A Compact Noise Model for C-CNTFETs. (28th February 2017) Authors: Marani, R.; Gelao, G.; Perri, A. G. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 4(2017) Page Start: M44 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A Comparison of CNTFET and CMOS Technology through the Design of a SRAM Cell. (1st January 2019) Authors: Marani, R.; Perri, A. G. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 1(2019) Page Start: M1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. A Comparison of CNTFET and CMOS Technology through the Design of a SRAM Cell. (31st January 2019) Authors: Marani, R.; Perri, A. G. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 1(2019) Page Start: M1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. A Comparison of CNTFET Models through the Design of a SRAM Cell. (14th September 2016) Authors: Marani, R.; Perri, A. G. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 10(2016) Page Start: M118 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. A Comparison of CNTFET Models through the Design of a SRAM Cell. (1st January 2016) Authors: Marani, R.; Perri, A. G. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 10(2016) Page Start: M118 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. A DC Thermal Model of Carbon Nanotube Field Effect Transistors for CAD Applications. (14th January 2016) Authors: Marani, R.; Perri, A. G. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 8(2016) Page Start: M3001 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. A DC Thermal Model of Carbon Nanotube Field Effect Transistors for CAD Applications. (1st January 2016) Authors: Marani, R.; Perri, A. G. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 8(2016) Page Start: M3001 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. A De-Embedding Procedure to Determine the Equivalent Circuit Parameters of RF CNTFETs. (1st January 2016) Authors: Marani, R.; Perri, A. G. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 5(2016) Page Start: M31 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. A De-Embedding Procedure to Determine the Equivalent Circuit Parameters of RF CNTFETs. (23rd February 2016) Authors: Marani, R.; Perri, A. G. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 5(2016) Page Start: M31 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗