A DC Thermal Model of Carbon Nanotube Field Effect Transistors for CAD Applications. (14th January 2016)

• Record Type: Journal Article
• Authors: Marani, R.; Perri, A. G.
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 8(2016)
• Page Start: M3001
• Page End: M3004
• Publication Date: 2016-01-14
• Subjects: CAD -- CNTFET -- Device Simulation -- I-V Characteristics -- Modelling -- Temperature Effects; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0011608jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this paper a DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. In particular we improve the semi-empirical model, already proposed by us, considering the temperature variation in the Landauer formula for the drain-source current. To confirm the validity of the proposed thermal model, the simulations are performed in different thermal conditions, obtaining I-V characteristics perfectly coincident with those of the Stanford-Source Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET), but with a run time lower. This result makes the proposed model particularly suitable to be implemented in CAD applications.