A Comparison of CNTFET Models through the Design of a SRAM Cell. (1st January 2016)

• Record Type: Journal Article
• Authors: Marani, R.; Perri, A. G.
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 10(2016)
• Page Start: M118
• Page End: M126
• Publication Date: 2016-01-01
• Subjects: Carbon NanoTube Field Effect Transistor -- Modelling -- SRAM Design -- Verilog-A; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0161610jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this paper we present a comparison of CNTFET models through the design of a SRAM cell, in order to identify the one more easily implementable in simulation software. In particular we consider two models, the first, already proposed by us, and the Stanford-Source Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET). The simulation results of the design of a SRAM cell structure in CNTFET technology, by using the two models, are shown highlighting the comparison in terms of performance, power dissipation and stability.