1. Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy. (4th April 2016) Authors: Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Tomabechi, Shuichi; Nakamura, Norikazu; Watanabe, Keiji Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Direct observation of nanometer‐scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures. Issue 4 (21st January 2016) Authors: Kotani, Junji; Yamada, Atsushi; Ishiguro, Tetsuro; Tomabechi, Shuichi; Nakamura, Norikazu Journal: Physica status solidi Issue: Volume 213:Issue 4(2016:Apr.) Page Start: 883 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer. (10th November 2017) Authors: Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Nakamura, Norikazu Journal: Japanese journal of applied physics Issue: Volume 57:Number 1(2018)Supplement 1 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density. (18th March 2021) Authors: Ozaki, Shiro; Yaita, Junya; Yamada, Atsushi; Kumazaki, Yusuke; Minoura, Yuichi; Ohki, Toshihiro; Okamoto, Naoya; Nakamura, Norikazu; Kotani, Junji Journal: Applied physics express Issue: Volume 14:Number 4(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers. Issue 4 (20th February 2023) Authors: Kotani, Junji; Makiyama, Kozo; Ohki, Toshihiro; Ozaki, Shiro; Okamoto, Naoya; Minoura, Yuichi; Sato, Masaru; Nakamura, Norikazu; Miyamoto, Yasuyuki Journal: Electronics letters Issue: Volume 59:Issue 4(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Origin of unintentional gallium incorporation into AlN spacer layer grown by metalorganic vapor phase epitaxy. Issue 2 (4th October 2016) Authors: Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Tomabechi, Shuichi; Nakamura, Norikazu Journal: Physica status solidi Issue: Volume 254:Issue 2(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates. (29th December 2020) Authors: Kumazaki, Yusuke; Ohki, Toshihiro; Kotani, Junji; Ozaki, Shiro; Niida, Yoshitaka; Minoura, Yuichi; Nishimori, Masato; Okamoto, Naoya; Sato, Masaru; Nakamura, Norikazu; Watanabe, Keiji Journal: Applied physics express Issue: Volume 14:Number 1(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Probing the effects of surface roughness and barrier layer thickness in InAlGaN/GaN HEMTs to improve carrier mobility. (19th February 2021) Authors: Yaita, Junya; Yamada, Atsuthi; Nakamura, Norikazu; Kotani, Junji Journal: Applied physics express Issue: Volume 14:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment. Issue 7 (3rd February 2022) Authors: Ozaki, Shiro; Yaita, Junya; Yamada, Atsushi; Minoura, Yuichi; Ohki, Toshihiro; Okamoto, Naoya; Nakamura, Norikazu; Kotani, Junji Journal: Physica status solidi Issue: Volume 219:Issue 7(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Tensile strain‐induced formation of micro‐cracks for AlGaN/GaN heterostructures. Issue 5 (6th February 2013) Authors: Kotani, Junji; Tomabechi, Shuichi; Miyajima, Toyoo; Nakamura, Norikazu; Kikkawa, Toshihide; Watanabe, Keiji; Imanishi, Kenji; Krishna, Sanjay; Plis, Elena Journal: Physica status solidi Issue: Volume 10:Issue 5(2013:May) Page Start: 808 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗