Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer. (10th November 2017)

• Record Type: Journal Article
• Authors: Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Nakamura, Norikazu
• Is Part Of: Japanese journal of applied physics. Volume 57:Number 1(2018)Supplement 1
• Publication Date: 2017-11-10
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.57.01AD01
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We demonstrated low-sheet-resistance metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors using AlGaN spacers with excellent surface morphology. We systematically investigated the effects of AlGaN spacer growth conditions on surface morphology and electron mobility. We found that the surface morphology of InAlN barriers depends on that of AlGaN spacers. Ga desorption from AlGaN spacers was suppressed by increasing the trimethylaluminum (TMA) supply rate, resulting in the small surface roughnesses of InAlN barriers and AlGaN spacers. Moreover, we found that an increase in the NH3 supply rate also improved the surface morphologies of InAlN barriers and AlGaN spacers as long as the TMA supply rate was high enough to suppress the degradation of GaN channels. Finally, we realized a low sheet resistance of 185.5 Ω/sq with a high electron mobility of 1210 cm 2 V −1 s −1 by improving the surface morphologies of AlGaN spacers and InAlN barriers.