1. (Invited) Room Temperature Wafer Bonding of Wide Bandgap Semiconductors. (20th July 2018) Authors: Mu, Fengwen; Wang, Yinghui; Suga, Tadatomo Journal: ECS transactions Issue: Volume 86:Number 5(2018) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Direct wafer bonding of Ga2O3–SiC at room temperature. Issue 5 (1st April 2019) Authors: Xu, Yang; Mu, Fengwen; Wang, Yinghui; Chen, Dapeng; Ou, Xin; Suga, Tadatomo Journal: Ceramics international Issue: Volume 45:Issue 5(2019) Page Start: 6552 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Direct Wafer Bonding of SiC-SiC at Room Temperature by SAB Method. (24th August 2016) Authors: Mu, Fengwen; Iguchi, Kenichi; Nakazawa, Haruo; Takahashi, Yoshikazu; Fujino, Masahisa; Suga, Tadatomo Journal: ECS transactions Issue: Volume 75:Number 9(2016) Page Start: 77 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Realization of wafer-scale single-crystalline GaN film on CMOS-compatible Si(100) substrate by ion-cutting technique. (13th October 2020) Authors: Shi, Hangning; Huang, Kai; Mu, Fengwen; You, Tiangui; Ren, Qinghua; Lin, Jiajie; Xu, Wenhui; Jin, Tingting; Huang, Hao; Yi, Ailun; Zhang, Shibin; Li, Zhongxu; Zhou, Min; Wang, Jianfeng; Xu, Ke; Ou, Xin Journal: Semiconductor science and technology Issue: Volume 35:Number 12(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Recent progress in the synthesis of graphene/CNT composites and the energy-related applications. (15th October 2020) Authors: Wu, Xin; Mu, Fengwen; Zhao, Haiyan Journal: Journal of materials science & technology Issue: Volume 55(2020) Page Start: 16 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices. (June 2018) Authors: Mu, Fengwen; He, Ran; Suga, Tadatomo Journal: Scripta materialia Issue: Number 150(2018) Page Start: 148 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer. Issue 5 (15th January 2021) Authors: Takeuchi, Kai; Mu, Fengwen; Matsumoto, Yoshiie; Suga, Tadatomo Journal: Advanced materials interfaces Issue: Volume 8:Issue 5(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Room-temperature wafer bonding of SiC–Si by modified surface activated bonding with sputtered Si nanolayer. (18th March 2016) Authors: Mu, Fengwen; Iguchi, Kenichi; Nakazawa, Haruo; Takahashi, Yoshikazu; Fujino, Masahisa; Suga, Tadatomo Journal: Japanese journal of applied physics Issue: Volume 55:Number 4(2016:Apr.)Supplement 4 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Sequential Plasma Activation for Low Temperature Bonding of Aluminosilicate Glass. (21st May 2021) Authors: Takeuchi, Kai; Mu, Fengwen; Yamauchi, Akira; Suga, Tadatomo Journal: ECS journal of solid state science and technology Issue: Volume 10:Number 5(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Silicon carbide wafer bonding by modified surface activated bonding method. (15th January 2015) Authors: Suga, Tadatomo; Mu, Fengwen; Fujino, Masahisa; Takahashi, Yoshikazu; Nakazawa, Haruo; Iguchi, Kenichi Journal: Japanese journal of applied physics Issue: Volume 54:Number 3(2015:Mar.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗