Silicon carbide wafer bonding by modified surface activated bonding method. (15th January 2015)

• Record Type: Journal Article
• Authors: Suga, Tadatomo; Mu, Fengwen; Fujino, Masahisa; Takahashi, Yoshikazu; Nakazawa, Haruo; Iguchi, Kenichi
• Is Part Of: Japanese journal of applied physics. Volume 54:Number 3(2015:Mar.)
• Publication Date: 2015-01-15
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.54.030214
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: 4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding between the SiC wafers with tensile strength greater than 32 MPa was demonstrated at room temperature under 5 kN force for 300 s. Almost the entire wafer has been bonded very well except a small peripheral region and few voids. The interface structure was analyzed to verify the bonding mechanism. It was found an amorphous layer existed as an intermediate layer at the interface. After annealing at 1273 K in vacuum for 1 h, the bonding tensile strength was still higher than 32 MPa. The interface changes after annealing were also studied. The results show that the thickness of the amorphous layer was reduced to half after annealing.