Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices. (June 2018)

• Record Type: Journal Article
• Authors: Mu, Fengwen; He, Ran; Suga, Tadatomo
• Is Part Of: Scripta materialia. Number 150(2018)
• Page Start: 148
• Page End: 151
• Publication Date: 2018-06
• Subjects: GaN-on-diamond -- Bonding -- Room temperature -- Interface -- High power devices; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2018.03.016
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: Fabrication of GaN-on-diamond structure by bonding technology is becoming more and more attractive for high-power GaN devices. However, researches on low temperature bonding between GaN and diamond is still not well developed. This work accomplished a GaN-diamond bonding at room temperature by a modified surface-activated-bonding (SAB) method for the first time. The microstructure and composition of the bonding interface were analyzed by using scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX). The results show that the interface is uniformly bonded without any nano-voids and is considered to be suitable for the fabrication of GaN-on-diamond structure. Graphical abstract: Unlabelled Image