Room-temperature wafer bonding of SiC–Si by modified surface activated bonding with sputtered Si nanolayer. (18th March 2016)

• Record Type: Journal Article
• Authors: Mu, Fengwen; Iguchi, Kenichi; Nakazawa, Haruo; Takahashi, Yoshikazu; Fujino, Masahisa; Suga, Tadatomo
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 4(2016:Apr.)Supplement 4
• Publication Date: 2016-03-18
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.04EC09
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: A modified surface activated bonding (SAB) with Fe–Si multi-nanolayers is expected to achieve the wafer bonding of SiC to various materials. However, Fe diffusion, which affects device performance, cannot be avoided during some annealing processes. In this work, the room-temperature wafer bonding of SiC–Si by only one sputtered Si nanolayer was successfully achieved. The bonding interface was investigated. A uniform intermediate layer with a thickness of ∼15 nm just containing Si, C, and Ar was found at the interface. The bonding strength between the SiC surface and the sputtered Si nanolayer could reach the bulk Si strength in accordance with the results of the strength test. This indicates that the wafer bonding of SiC to any other materials can be achieved easily if the material could be also strongly bonded to the sputtered Si nanolayer. In addition, the thermal and chemical reliabilities of the SiC–Si bonding interface were investigated by rapid thermal annealing and KOH etching, respectively.