1. A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters. (May 2018) Authors: Cristoloveanu, S.; Lee, K.H.; Parihar, M.S.; El Dirani, H.; Lacord, J.; Martinie, S.; Le Royer, C.; Barbe, J.-Ch.; Mescot, X.; Fonteneau, P.; Galy, Ph.; Gamiz, F.; Navarro, C.; Cheng, B.; Duan, M.; Adamu-Lema, F.; Asenov, A.; Taur, Y.; Xu, Y.; Kim, Y-T. Journal: Solid-state electronics Issue: Volume 143(2018) Page Start: 10 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A2RAM compact modeling: From DC to 1T-DRAM memory operation. (June 2020) Authors: Wakam, F. Tcheme; Lacord, J.; Bawedin, M.; Martinie, S.; Cristoloveanu, S.; Ghibaudo, G.; Barbe, J.-Ch. Journal: Solid-state electronics Issue: Volume 168(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Doping profile extraction in thin SOI films: Application to A2RAM. (September 2019) Authors: Tcheme Wakam, F.; Lacord, J.; Bawedin, M.; Martinie, S.; Cristoloveanu, S.; Ghibaudo, G.; Barbe, J.-Ch. Journal: Solid-state electronics Issue: Volume 159(2019) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50 nm. (January 2016) Authors: Le Royer, C.; Villalon, A.; Hutin, L.; Martinie, S.; Nguyen, P.; Barraud, S.; Glowacki, F.; Allain, F.; Bernier, N.; Cristoloveanu, S.; Vinet, M. Journal: Solid-state electronics Issue: Volume 115 Part B(2016) Page Start: 167 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Investigation of ambipolar signature in SiGeOI homojunction tunnel FETs. (January 2016) Authors: Hutin, L.; Oeflein, R.P.; Borrel, J.; Martinie, S.; Tabone, C.; Le Royer, C.; Vinet, M. Journal: Solid-state electronics Issue: Volume 115 Part B(2016) Page Start: 160 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration. (June 2018) Authors: Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M.V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M. Journal: Solid-state electronics Issue: Volume 144(2018) Page Start: 78 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. New prospects on high on-current and steep subthreshold slope for innovative Tunnel FET architectures. (September 2019) Authors: Diaz Llorente, C.; Colinge, J.-P.; Martinie, S.; Cristoloveanu, S.; Wan, J.; Le Royer, C.; Ghibaudo, G.; Vinet, M. Journal: Solid-state electronics Issue: Volume 159(2019) Page Start: 26 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Non-Quasi-Static modeling and methodology in fully depleted SOI MOSFET for L-UTSOI model. (January 2023) Authors: Martinie, S.; Rozeau, O.; Park, HyoEun; Park, Sungjoon; Scheer, P.; El Ghouli, S.; Juge, A.; Lee, H.; Poiroux, T. Journal: Solid-state electronics Issue: Volume 199(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature. (August 2020) Authors: Ghibaudo, G.; Aouad, M.; Casse, M.; Martinie, S.; Poiroux, T.; Balestra, F. Journal: Solid-state electronics Issue: Volume 170(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application. (December 2021) Authors: Aouad, M.; Poiroux, T.; Martinie, S.; Triozon, F.; Vinet, M.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 186(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗