1. (Invited) Negative Capacitance III-V FinFETs for Ultra-Low-Power Applications. (3rd July 2019) Authors: Chang, Edward Yi; Luc, Quang-Ho; Tran, Nhan-Ai; Lin, Yueh-Chin Journal: ECS transactions Issue: Volume 92:Number 1(2019) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Communication—Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications. (1st January 2019) Authors: Yao, Jing-Neng; Lin, Yueh-Chin; Wong, Ying-Chieh; Huang, Ting-Jui; Hsu, Heng-Tung; Sze, Simon M.; Chang, Edward Yi Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: P319 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Communication—Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications. (7th June 2019) Authors: Yao, Jing-Neng; Lin, Yueh-Chin; Wong, Ying-Chieh; Huang, Ting-Jui; Hsu, Heng-Tung; Sze, Simon M.; Chang, Edward Yi Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: P319 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Effect of the Indium Compositions in Tri-Gate InxGa1−xAs HEMTs for High-Frequency Low Noise Application. (1st November 2022) Authors: Wang, Chun; Kuo, Che-Ning; Lin, Yueh-Chin; Hsu, Heng-Tung; Tsao, Yi-Fan; Lee, Ching-Ting; Chang, Edward Yi Journal: ECS journal of solid state science and technology Issue: Volume 11:Number 11(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric. (9th March 2016) Authors: Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi Journal: Japanese journal of applied physics Issue: Volume 55:Number 4(2016:Apr.)Supplement 4 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications. (14th October 2015) Authors: Fatah, Faiz Aizad; Lin, Yueh-Chin; Lee, Tsung-Yun; Yang, Kai-Chun; Liu, Ren-Xuan; Chan, Jing-Ray; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi Journal: ECS journal of solid state science and technology Issue: Volume 4:Number 12(2015) Page Start: N157 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications. (1st January 2015) Authors: Fatah, Faiz Aizad; Lin, Yueh-Chin; Lee, Tsung-Yun; Yang, Kai-Chun; Liu, Ren-Xuan; Chan, Jing-Ray; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi Journal: ECS journal of solid state science and technology Issue: Volume 4:Number 12(2015) Page Start: N157 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Reliability improvement in GaN HEMT power device using a field plate approach. (July 2017) Authors: Wu, Wen-Hao; Lin, Yueh-Chin; Chin, Ping-Chieh; Hsu, Chia-Chieh; Lee, Jin-Hwa; Liu, Shih-Chien; Maa, Jer-shen; Iwai, Hiroshi; Chang, Edward Yi; Hsu, Heng-Tung Journal: Solid-state electronics Issue: Volume 133(2017) Page Start: 64 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Reliability study of high-κ La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal–oxide–semiconductor capacitor. (22nd January 2016) Authors: Chu, Chung-Ming; Lin, Yueh-Chin; Lee, Wei-I; Dee, Chang Fu; Wong, Yuen-Yee; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Yap, Seong Ling; Chang, Edward Yi Journal: Applied physics express Issue: Volume 9:Number 2(2016:Feb.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications. Issue 8 (15th February 2023) Authors: Lee, Ming-Wen; Lin, Yueh-Chin; Lai, Kuan-Hsien; Weng, You-Chen; Hsu, Heng-Tung; Chang, Edward Yi Other Names: Xing Grace guestEditor.; Mi Zetian guestEditor.; Chowdhury Srabanti guestEditor. Journal: Physica status solidi Issue: Volume 220:Issue 8(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗