Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric. (9th March 2016)

• Record Type: Journal Article
• Authors: Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi
• Is Part Of: Japanese journal of applied physics. Volume 55:Number 4(2016:Apr.)Supplement 4
• Publication Date: 2016-03-09
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.55.04EG04
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2 O3 /SiO2 AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2 O3 -based (La2 O3 /HfO2, La2 O3 /CeO2 and single La2 O3 ) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2 O3 /SiO2 MOS-HEMT were demonstrated.