Communication—Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications. (1st January 2019)

• Record Type: Journal Article
• Authors: Yao, Jing-Neng; Lin, Yueh-Chin; Wong, Ying-Chieh; Huang, Ting-Jui; Hsu, Heng-Tung; Sze, Simon M.; Chang, Edward Yi
• Is Part Of: ECS journal of solid state science and technology. Volume 8:Number 6(6019)
• Page Start: P319
• Page End: P321
• Publication Date: 2019-01-01
• Subjects: Electron Devices - III-V -- π-Gate -- depletion-mode -- InAs HEMTs; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0141906jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Composite channel (In0.65 Ga0.35 As/InAs/ In0.65 Ga0.35 As) high electron mobility transistors (HEMTs) with π-gate structure were investigated for high-speed and low-power logic applications. The conventional and tri-gate MESA HEMTs were compared with the π-gate device for evaluation. The π-gate device exhibited the best maximum transconductance value of 1584 mS/mm, on-state current of 332mA/mm, subthreshold swing (SS) of 78.1 mV/decade, and ION /IOFF ratio of 3 × 10 4 at VDS = 0.5 V at room temperature. These results indicated that the designed π-gate InAs devices improve the electrical characteristics of InAs HEMTs for high-speed and low-power logic applications.