Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications. (1st January 2015)

• Record Type: Journal Article
• Authors: Fatah, Faiz Aizad; Lin, Yueh-Chin; Lee, Tsung-Yun; Yang, Kai-Chun; Liu, Ren-Xuan; Chan, Jing-Ray; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi
• Is Part Of: ECS journal of solid state science and technology. Volume 4:Number 12(2015)
• Page Start: N157
• Page End: N159
• Publication Date: 2015-01-01
• Subjects: Enhancement Mode -- HEMT -- High-Speed -- InAs -- Low-Power Logic; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0171512jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : In this study, a 60-nm enhancement-mode (E-mode) In0.65 Ga0.35 As/InAs/In0.65 Ga0.35 As high electron mobility transistor (HEMT) was developed, and its potential for use inhigh-speed and low-power logic applications was investigated. When the E-mode device was biased at a drain-source voltage of 0.5 V, it demonstrated a cutoff frequency of 169 GHz, drain-induced barrier lowering of 70 mV/V, minimum subthreshold swing of 67 mV/decade, and ION /IOFF ratio greater than 1.6 × 10 4 . The high performance of the E-mode device is attributed to the use of a thin barrier layer along with Pt gate sinking technology. These results confirm that E-mode In0.65 Ga0.35 As/InAs/In0.65 Ga0.35 As HEMTs have great potential for use inhigh-speed and low-power logic applications.