1. A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance. (18th May 2020) Authors: Gaur, Abhinav; Agarwal, Tarun; Asselberghs, Inge; Radu, Iuliana; Heyns, Marc; Lin, Dennis Journal: 2D materials Issue: Volume 7:Number 3(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2. (22nd May 2019) Authors: Gaur, Abhinav; Chiappe, Daniele; Lin, Dennis; Cott, Daire; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana Journal: 2D materials Issue: Volume 6:Number 3(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Construction of Orthogonal Nearly Latin Hypercubes. (27th June 2014) Authors: Steinberg, David M.; Lin, Dennis Journal: Quality and reliability engineering international Issue: Volume 31:Number 8(2015:Dec.) Page Start: 1397 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Graphene based Van der Waals contacts on MoS2 field effect transistors. (9th October 2020) Authors: Mootheri, Vivek; Arutchelvan, Goutham; Banerjee, Sreetama; Sutar, Surajit; Leonhardt, Alessandra; Boulon, Marie-Emmanuelle; Huyghebaert, Cedric; Houssa, Michel; Asselberghs, Inge; Radu, Iuliana; Heyns, Marc; Lin, Dennis Journal: 2D materials Issue: Volume 8:Number 1(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Insight on the Characterization of MoS2 Based Devices and Requirements for Logic Device Integration. (18th August 2016) Authors: de la Rosa, César J. Lockhart; Arutchelvan, Goutham; Radu, Iuliana; Lin, Dennis; Huyghebaert, Cedric; Heyns, Marc; De Gendt, Stefan Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 11(2016) Page Start: Q3072 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Insight on the Characterization of MoS2 Based Devices and Requirements for Logic Device Integration. (1st January 2016) Authors: de la Rosa, César J. Lockhart; Arutchelvan, Goutham; Radu, Iuliana; Lin, Dennis; Huyghebaert, Cedric; Heyns, Marc; De Gendt, Stefan Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 11(2016) Page Start: Q3072 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Interface admittance measurement and simulation of dual gated CVD WS2 MOSCAPs: Mapping the DIT(E) profile. (September 2021) Authors: Mootheri, Vivek; Wu, Xiangyu; Cott, Daire; Groven, Benjamin; Heyns, Marc; Asselberghs, Inge; Radu, Iuliana; Lin, Dennis Journal: Solid-state electronics Issue: Volume 183(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity. (17th August 2018) Authors: Chiappe, Daniele; Ludwig, Jonathan; Leonhardt, Alessandra; El Kazzi, Salim; Nalin Mehta, Ankit; Nuytten, Thomas; Celano, Umberto; Sutar, Surajit; Pourtois, Geoffrey; Caymax, Matty; Paredis, Kristof; Vandervorst, Wilfried; Lin, Dennis; De Gendt, Stefan; Barla, Kathy; Huyghebaert, Cedric; Asselberg... Journal: Nanotechnology Issue: Volume 29:Number 42(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts. (4th November 2019) Authors: Balaji, Yashwanth; Smets, Quentin; Śzabo, Áron; Mascaro, Marco; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana; Luisier, Mathieu; Groeseneken, Guido Journal: Advanced functional materials Issue: Volume 30:Number 4(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Reaction temperature and time dependence of MoCl5 intercalation to few-layer graphene. (30th March 2020) Authors: Ketsombun, Ekkaphop; Wu, Xiangyu; Asselberghs, Inge; Achra, Swati; Huyghebaert, Cedric; Lin, Dennis; Tokei, Zsolt; Ueno, Kazuyoshi Journal: Japanese journal of applied physics Issue: Volume 59:Number SL(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗