1. Defect Self‐Compensation for High‐Mobility Bilayer InGaZnO/In2O3 Thin‐Film Transistor. (18th April 2019) Authors: He, Jiawei; Li, Guoli; Lv, Yawei; Wang, Chunlan; Liu, Chuansheng; Li, Jinchai; Flandre, Denis; Chen, Huipeng; Guo, Tailiang; Liao, Lei Journal: Advanced Electronic Materials Issue: Volume 5:Number 6(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Design and fabrication of high power InGaN blue laser diode over 8 W. (July 2021) Authors: Zhong, Zhibai; Lu, Shiqiang; Li, Jinchai; Lin, Wei; Huang, Kai; Li, Shuping; Cai, Duanjun; Kang, Junyong Journal: Optics & laser technology Issue: Volume 139(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs. Issue 87 (5th December 2017) Authors: Zheng, Jinjian; Li, Jinchai; Zhong, Zhibai; Lin, Wei; Chen, Li; Li, Kongyi; Wang, Xinghe; Chou, Chilun; Li, Shuiqing; Kang, Junyong Journal: RSC advances Issue: Volume 7:Issue 87(2017) Page Start: 55157 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Electrode‐Dependent Electrical Properties of Detection‐Band Tunable Ultraviolet Photodetectors Based on Ga2O3/GaN Heterostructures. Issue 15 (7th June 2021) Authors: Li, Guanqi; Tang, Ruifan; Gao, Na; Li, Cheng; Li, Jinchai; Huang, Kai; Kang, Junyong; Zhang, Rong Journal: Physica status solidi Issue: Volume 218:Issue 15(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Fabrication of High‐Voltage Flip Chip Deep Ultraviolet Light‐Emitting Diodes Using an Inclined Sidewalls Structure. Issue 16 (4th June 2019) Authors: Zhong, Zhibai; Zheng, Xuanli; Li, Jinchai; Zheng, Jinjian; Zang, Yashu; Lin, Wei; Kang, Junyong Journal: Physica status solidi Issue: Volume 216:Issue 16(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Floating Gate Memory‐based Monolayer MoS2 Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics. Issue 2 (13th August 2014) Authors: Wang, Jingli; Zou, Xuming; Xiao, Xiangheng; Xu, Lei; Wang, Chunlan; Jiang, Changzhong; Ho, Johnny C.; Wang, Ti; Li, Jinchai; Liao, Lei Journal: Small Issue: Volume 11:Issue 2(2015) Page Start: 208 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Hydrogen gas sensor based on metal oxide nanoparticles decorated graphene transistor1. Issue 22 (14th June 2015) Authors: Zhang, Zhangyuan; Zou, Xuming; Xu, Lei; Liao, Lei; Liu, Wei; Ho, Johnny; Xiao, Xiangheng; Jiang, Changzhong; Li, Jinchai Journal: Nanoscale Issue: Volume 7:Issue 22(2015) Page Start: 10078 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Improved semipolar green InGaN/GaN quantum wells on asymmetrically grown (112̄2) GaN templates and their correlations. Issue 14 (23rd March 2018) Authors: Wu, Zhengyuan; Shih, Tienmo; Li, Jinchai; Tian, Pengfei; Liu, Ran; Kang, Junyong; Fang, Zhilai Journal: CrystEngComm Issue: Volume 20:Issue 14(2018) Page Start: 2053 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Integration of High‐k Oxide on MoS2 by Using Ozone Pretreatment for High‐Performance MoS2 Top‐Gated Transistor with Thickness‐Dependent Carrier Scattering Investigation. Issue 44 (1st October 2015) Authors: Wang, Jingli; Li, Songlin; Zou, Xuming; Ho, Johnny; Liao, Lei; Xiao, Xiangheng; Jiang, Changzhong; Hu, Weida; Wang, Jianlu; Li, Jinchai Journal: Small Issue: Volume 11:Issue 44(2015) Page Start: 5932 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Interface Engineering for High‐Performance Top‐Gated MoS2 Field‐Effect Transistors. (28th July 2014) Authors: Zou, Xuming; Wang, Jingli; Chiu, Chung‐Hua; Wu, Yun; Xiao, Xiangheng; Jiang, Changzhong; Wu, Wen‐Wei; Mai, Liqiang; Chen, Tangsheng; Li, Jinchai; Ho, Johnny C.; Liao, Lei Journal: Advanced materials Issue: Volume 26:Number 36(2014) Page Start: 6255 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗