Interface Engineering for High‐Performance Top‐Gated MoS2 Field‐Effect Transistors. (28th July 2014)

• Record Type: Journal Article
• Authors: Zou, Xuming; Wang, Jingli; Chiu, Chung‐Hua; Wu, Yun; Xiao, Xiangheng; Jiang, Changzhong; Wu, Wen‐Wei; Mai, Liqiang; Chen, Tangsheng; Li, Jinchai; Ho, Johnny C.; Liao, Lei
• Is Part Of: Advanced materials. Volume 26:Number 36(2014)
• Page Start: 6255
• Page End: 6261
• Publication Date: 2014-07-28
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201402008
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201402008-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Experimental evidence of the optimized interface engineering effects in MoS₂ transistors</bold> is demonstrated. The MoS₂/Y₂O₃/HfO₂ stack offers excellent interface control. Results show that HfO₂ layer can be scaled down to 9 nm, yet achieving a near‐ideal sub‐threshold slope (65 mv/dec) and the highest saturation current (526 μA/μm) of any MoS₂ transistor reported to date. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh1f8bcw93" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>