Fabrication of High‐Voltage Flip Chip Deep Ultraviolet Light‐Emitting Diodes Using an Inclined Sidewalls Structure. Issue 16 (4th June 2019)

• Record Type: Journal Article
• Authors: Zhong, Zhibai; Zheng, Xuanli; Li, Jinchai; Zheng, Jinjian; Zang, Yashu; Lin, Wei; Kang, Junyong
• Is Part Of: Physica status solidi. Volume 216:Issue 16(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-06-04
• Subjects: deep ultraviolet -- high voltage -- light‐emitting diodes -- sidewalls; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900059
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Two types of high‐voltage flip chip deep ultraviolet light emitting diodes (HV‐FC DUV‐LEDs) are constructed with 2 × 2 and 3 × 3 cells, respectively, in which each single cell is fabricated with inclined sidewalls covered by SiO2 /Al. The simulation results suggest that the structure with inclined sidewalls is much favorable to extract the transverse magnetic‐polarized lights. As a result, the light power as high as 145.7 mW is achieved in HV‐FC DUV‐LED constructed with 3 × 3 cells at 1000 mA. Abstract : High‐voltage flip chip deep ultraviolet light emitting diodes (HV‐FC DUV‐LEDs) are fabricated with inclined sidewalls covered by SiO2 /Al. High output power of 145.7 mW is realized by using such HV‐FC DUV‐LED constructed with 3 × 3 cells at 1000 mA.