Author/Creator: Lai, P.T. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Lai, P.T.

1. A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric. (February 2016)

Authors:: Ji, Feng; Xu, J.P.; Liu, L.; Tang, W.M.; Lai, P.T.
Journal:: Microelectronics and reliability
Issue:: Volume 57(2016)
Page Start:: 24
Record Type:: Journal Article
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2. Dependence of sensing performance of OTFT-based H2 sensor on channel length. (26th April 2021)

Authors:: Li, Bochang; Lai, P.T.; Tang, W.M.
Journal:: International journal of hydrogen energy
Issue:: Volume 46:Number 29(2021)
Page Start:: 16232
Record Type:: Journal Article
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3. Improved Charge-Trapping Performance of Hf-Doped SrTiO3 for Nonvolatile Memory Applications. (27th March 2015)

Authors:: Huang, X.D.; Lai, P.T.
Journal:: ECS transactions
Issue:: Volume 66:Number 5(2015)
Page Start:: 117
Record Type:: Journal Article
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4. Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer. (January 2016)

Authors:: Lu, H.H.; Xu, J.P.; Liu, L.; Wang, L.S.; Lai, P.T.; Tang, W.M.
Journal:: Microelectronics and reliability
Issue:: Volume 56(2016)
Page Start:: 17
Record Type:: Journal Article
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5. Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer. (January 2016)

Authors:: Lu, H.H.; Xu, J.P.; Liu, L.; Wang, L.S.; Lai, P.T.; Tang, W.M.
Journal:: Microelectronics and reliability
Issue:: Volume 56(2016)
Page Start:: 17
Record Type:: Journal Article
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6. Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications. (October 2016)

Authors:: Shi, R.P.; Huang, X.D.; Sin, Johnny K.O.; Lai, P.T.
Journal:: Microelectronics and reliability
Issue:: Volume 65(2016)
Page Start:: 64
Record Type:: Journal Article
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7. Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications. (October 2016)

Authors:: Shi, R.P.; Huang, X.D.; Sin, Johnny K.O.; Lai, P.T.
Journal:: Microelectronics and reliability
Issue:: Volume 65(2016)
Page Start:: 64
Record Type:: Journal Article
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8. Pentacene organic thin‐film transistor with HfYO gate dielectric made on adhesive vacuum tape. Issue 8 (1st April 2015)

Authors:: Han, C.Y.; Tang, W.M.; Leung, C.H.; Lai, P.T.
Journal:: Electronics letters
Issue:: Volume 51:Issue 8(2015)
Page Start:: 644
Record Type:: Journal Article
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