Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer. (January 2016)

• Record Type: Journal Article
• Authors: Lu, H.H.; Xu, J.P.; Liu, L.; Wang, L.S.; Lai, P.T.; Tang, W.M.
• Is Part Of: Microelectronics and reliability. Volume 56(2016)
• Page Start: 17
• Page End: 21
• Publication Date: 2016-01
• Subjects: GaAs MOS devices -- NH3-plasma treatment -- Interfacial passivation layer -- Interface-state density; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.10.013
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with yittrium-oxynitride interfacial passivation layer treated by N2 −/NH3 -plasma are investigated, showing that lower interface-state density (1.24 × 10 12 cm − 2 eV − 1 near midgap), smaller gate leakage current density (1.34 × 10 − 5 A/cm 2 at Vfb + 1 V), smaller capacitance equivalent thickness (1.43 nm), and larger equivalent dielectric constant (24.5) can be achieved for the sample with NH3 -plasma treatment than the samples with N2 −/no-plasma treatment. The mechanisms lie in the fact that NH3 -plasma can provide not only N atoms, but H atoms and NH radicals to effectively passivate the high-k/GaAs interface, thus less pinning the Femi level at high-k/GaAs interface. Highlights: Using yittrium-oxynitride as interfacial passivation layer to get a good interface Using NH3 or N2 plasma to treat YON interfacial passivation layer and passivate the interface The sample treated by NH3 plasma shows better performance.