Improved Charge-Trapping Performance of Hf-Doped SrTiO3 for Nonvolatile Memory Applications. (27th March 2015)

• Record Type: Journal Article
• Authors: Huang, X.D.; Lai, P.T.
• Is Part Of: ECS transactions. Volume 66:Number 5(2015)
• Page Start: 117
• Page End: 120
• Publication Date: 2015-03-27
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06605.0117ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The charge-trapping characteristics of Hf doped SrTiO3 have been studied based on Al/Al2O3/Hf-doped SrTiO3 /SiO2 /Si capacitors. The thermodynamic stability of the SrTiO3 film is significantly improved by Hf incorporation, thus resulting in negligible formation of an interlayer at the Hf-doped SrTiO3 /SiO2 interface, as confirmed by X-ray photoelectron spectroscopy and transmission electron microscopy. The memory device with Hf-doped SrTiO3 as charge-trapping layer displays high speed at low operating voltage (a VFB shift of 1.9 V at +6 V, 100 ms) and good data retention (charge loss of 12.7% after 10 4 s). Therefore, the Hf-doped SrTiO3 film is a promising material as charge-trapping layer for high-performance nonvolatile memory applications.