Pentacene organic thin‐film transistor with HfYO gate dielectric made on adhesive vacuum tape. Issue 8 (1st April 2015)

• Record Type: Journal Article
• Authors: Han, C.Y.; Tang, W.M.; Leung, C.H.; Lai, P.T.
• Is Part Of: Electronics letters. Volume 51:Issue 8(2015)
• Page Start: 644
• Page End: 646
• Publication Date: 2015-04-01
• Subjects: organic semiconductors -- thin film transistors -- flexible electronics -- high‐k dielectric thin films -- hafnium compounds -- atomic force microscopy -- carrier mobility; pentacene organic thin‐film transistor -- HfYO gate dielectric -- HfYO -- temperature 293 K to 298 K -- carrier mobility -- AFM -- subthreshold swing -- high‐κ gate dielectric -- adhesive flexible vacuum tape; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.0118
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Pentacene organic thin‐film transistor (OTFT) with HfYO as gate dielectric has been fabricated at room temperature on adhesive flexible vacuum tape and shows high performance. The threshold voltage is as low as −1.77 V due to the high‐ κ gate dielectric employed. A small sub‐threshold swing (SS) of 0.145 V/dec indicates good interface between the gate dielectric and pentacene film. Atomic force microscopy (AFM) reveals that large pentacene gains form on the HfYO gate dielectric, leading to a high carrier mobility of 0.236 cm 2 V −1 s −1 . These good results suggest that the adhesive vacuum tape can be used as the substrate for adhesive flexible OTFT, and HfYO is a promising gate dielectric for high‐performance pentacene OTFT.