1. A new low specific on-resistance Hk-LDMOS with N-poly diode. (January 2017) Authors: Deng, Jing; Huang, Mingmin; Cheng, Junji; Lyu, Xinjiang; Chen, Xingbi Journal: Superlattices and microstructures Issue: Volume 101(2017) Page Start: 180 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses. (1st March 2023) Authors: Li, Weidan; Huang, Mingmin; Ma, Keqiang; Hu, Qiang; Jiang, Xingli; Wang, Siliang; Gong, Min Journal: Semiconductor science and technology Issue: Volume 38:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Bedside ocular ultrasonography for diagnosing increased intracranial pressure in patients with leptomeningeal metastases from non‐small‐cell lung cancer. (4th December 2022) Authors: Jiang, Cheng; Lin, Yongjuan; Li, Huiying; Xie, Yu; Yu, Tingting; Feng, Jingyu; Huang, Mingmin; Guo, Aibin; Shen, Haiyun; Zhang, YiDan; Yin, Zhenyu Journal: Cancer medicine Issue: Volume 12:Number 6(2023) Page Start: 6913 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Carrier‐storage‐enhanced superjunction IGBT with n‐Si and p‐3C‐SiC pillars. Issue 25 (1st December 2019) Authors: Li, Rui; Huang, Mingmin; Yang, Zhimei; Ma, Yao; Gong, Min Journal: Electronics letters Issue: Volume 55:Issue 25(2019) Page Start: 1353 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Electrical characterization and temperature reliability of 4H-SiC Schottky barrier diodes after Electron radiation. (February 2023) Authors: Xiang, Meiju; Wang, Duowei; He, Mu; Rui, Guo; Ma, Yao; Zhu, Xuhao; Mei, Fan; Gong, Min; Li, Yun; Huang, Mingmin; Yang, Zhimei Journal: Microelectronics and reliability Issue: Volume 141(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Low‐loss reverse blocking IGBT with PNM structure and trench collectors. Issue 6 (1st March 2019) Authors: Liu, Fenghao; Huang, Mingmin; Li, Rui; Lai, Li; Gong, Min Journal: Electronics letters Issue: Volume 55:Issue 6(2019) Page Start: 350 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Novel phenomenon of negative permittivity in silicon-based PiN diodes induced by electron irradiation. (January 2021) Authors: Li, Yun; Gong, Min; Yang, Zhimei; Su, Ping; Ma, Yao; Fan, Sijie; Huang, Mingmin Journal: Superlattices and microstructures Issue: Volume 149(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Permittivity modulation in Si-based PIN diode by electron irradiation. (1st September 2022) Authors: Wang, Yisong; Gong, Min; Li, Yun; Yang, Zhimei; Rong, Chenshuo; Huang, Mingmin; Ma, Yao; Li, Jianghuan Journal: Semiconductor science and technology Issue: Volume 37:Number 9(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Semi-superjunction IGBT with a relatively high-resistance p-top region for low on-state and turn-off losses. (October 2021) Authors: Hu, Min; Huang, Mingmin; Li, Rui; Ma, Yao; Yang, Zhimei; Li, Yun; Gong, Min Journal: Superlattices and microstructures Issue: Volume 158(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Snapback‐free reverse conducting IGBT with p‐float and n‐ring surrounding trench‐collector. Issue 24 (3rd November 2020) Authors: Li, Jie; Huang, Mingmin; Chen, Chang; Yang, Zhimei; Ma, Yao; Gong, Min Journal: Electronics letters Issue: Volume 56:Issue 24(2020) Page Start: 1337 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗