Carrier‐storage‐enhanced superjunction IGBT with n‐Si and p‐3C‐SiC pillars. Issue 25 (1st December 2019)

• Record Type: Journal Article
• Authors: Li, Rui; Huang, Mingmin; Yang, Zhimei; Ma, Yao; Gong, Min
• Is Part Of: Electronics letters. Volume 55:Issue 25(2019)
• Page Start: 1353
• Page End: 1355
• Publication Date: 2019-12-01
• Subjects: silicon compounds -- silicon -- insulated gate bipolar transistors -- wide band gap semiconductors -- elemental semiconductors -- semiconductor heterojunctions -- semiconductor device breakdown; carrier‐storage‐enhanced superjunction IGBT -- carrier‐storage‐enhanced superjunction insulated gate bipolar transistor -- carrier‐storage effect -- conventional SJ IGBT -- p‐3C‐silicon carbide pillars -- n‐silicon pillar -- turn‐off loss -- on‐state voltage drop -- breakdown voltage -- field stop IGBT -- voltage 0.35 V -- voltage 0.3 V -- voltage 1450.0 V -- voltage 0.81 V -- voltage 1.22 V -- Si‐SiC; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2019.2803
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A carrier‐storage‐enhanced superjunction (SJ) insulated gate bipolar transistor (IGBT) with n‐Si and p‐3C‐SiC pillars (Si/SiC SJ IGBT) is studied. At the on‐state, the n‐Si/p‐SiC heterojunction acts as a barrier for holes in the n‐Si pillar, which helps to enhance the carrier‐storage effect in the n‐Si pillar and improves the tradeoff between turn‐off loss ( E off ) and on‐state voltage drop ( V CE(sat) ). It is found by simulations that V CE(sat) of the Si/SiC SJ IGBT can be 0.35 V lower than that of the conventional SJ IGBT with the same breakdown voltage ( V B = 1450 V). Under E off = 5 mJ/cm 2, V CE(sat) of the Si/SiC SJ IGBT is 1.22 V, which is 0.30 and 0.81 V lower than V CE(sat) of the conventional SJ IGBT and the field stop IGBT, respectively.