A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses. (1st March 2023)
- Record Type:
- Journal Article
- Title:
- A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses. (1st March 2023)
- Main Title:
- A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses
- Authors:
- Li, Weidan
Huang, Mingmin
Ma, Keqiang
Hu, Qiang
Jiang, Xingli
Wang, Siliang
Gong, Min - Abstract:
- Abstract: A novel, trench gates, double reduced surface field, lateral insulated gate bipolar transistor based on silicon-on-insulator (SOI-LIGBT) is proposed and investigated. A p-top layer connected to the emitter via two series diodes and n-rings surrounding the bottom of trench gates are used to reduce the on-state voltage drop ( V CE(sat) ) and turn-off loss ( E off ). A deep trench with a p-ring is introduced to form a gate-drain shorted positive channel metal oxide semiconductor, which can automatically raise the potential of the p-ring during turn-off so as to enhance the dynamic avalanche immunity. Besides, the deep trench with a p-ring can shield the high electric field from n-rings at the blocking state, which avoids the breakdown of n-rings. Simulation results indicate that the proposed LIGBT can be safely turned off even under a bus voltage equal to the breakdown voltage ( V B ), and V CE(sat) under E off = 1 mJ cm −2 can be 24% lower than that of the conventional LIGBT.
- Is Part Of:
- Semiconductor science and technology. Volume 38:Number 3(2023)
- Journal:
- Semiconductor science and technology
- Issue:
- Volume 38:Number 3(2023)
- Issue Display:
- Volume 38, Issue 3 (2023)
- Year:
- 2023
- Volume:
- 38
- Issue:
- 3
- Issue Sort Value:
- 2023-0038-0003-0000
- Page Start:
- Page End:
- Publication Date:
- 2023-03-01
- Subjects:
- lateral insulated gate bipolar transistor (LIGBT) -- turn-off loss -- on-state voltage drop -- p-ring -- dynamic avalanche
Semiconductors -- Periodicals
621.38152 - Journal URLs:
- http://iopscience.iop.org/0268-1242/1 ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.1088/1361-6641/acb0f6 ↗
- Languages:
- English
- ISSNs:
- 0268-1242
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 25967.xml