1. A possible origin of the large leakage current in ferroelectric Al1−xScxN films. (25th February 2021) Authors: Kataoka, Junji; Tsai, Sung-Lin; Hoshii, Takuya; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Kakushima, Kuniyuki Journal: Japanese journal of applied physics Issue: Volume 60:Number 3(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates. (22nd May 2019) Authors: Hoshii, Takuya; Nakajima, Akira; Nishizawa, Shin-ichi; Ohashi, Hiromichi; Kakushima, Kuniyuki; Wakabayashi, Hitoshi; Tsutsui, Kazuo Journal: Japanese journal of applied physics Issue: Volume 58:Number 6(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement. (1st February 2022) Authors: Mizutani, Kazuto; Hoshii, Takuya; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Chang, Edward Y.; Kakushima, Kuniyuki Journal: Japanese journal of applied physics Issue: Volume 61:Number 2(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement. (3rd February 2022) Authors: Mizutani, Kazuto; Hoshii, Takuya; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Chang, Edward Y.; Kakushima, Kuniyuki Journal: Japanese journal of applied physics Issue: Volume 61:Number 2(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Electrical Characteristics of Atomic Layer Deposited Y-Silicate Dielectrics. (8th September 2020) Authors: Ohta, Atsuhiro; Song, Jinhan; Hoshii, Takuya; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Kakushima, Kuniyuki Journal: ECS transactions Issue: Volume 98:Number 3(2020) Page Start: 153 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Electrical Characterization of Sputter Deposited AlxSc1-XN Thin Films. (24th April 2020) Authors: Tsai, SungLin; Kusafuka, Kazuki; Hoshii, Takuya; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Kakushima, Kuniyuki Journal: ECS transactions Issue: Volume 97:Number 3(2020) Page Start: 45 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Experimental demonstration of high-gain CMOS inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs. (1st May 2022) Authors: Kawanago, Takamasa; Matsuzaki, Takahiro; Kajikawa, Ryosuke; Muneta, Iriya; Hoshii, Takuya; Kakushima, Kuniyuki; Tsutsui, Kazuo; Wakabayashi, Hitoshi Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Experimental demonstration of high-gain CMOS inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs. (1st May 2022) Authors: Kawanago, Takamasa; Matsuzaki, Takahiro; Kajikawa, Ryosuke; Muneta, Iriya; Hoshii, Takuya; Kakushima, Kuniyuki; Tsutsui, Kazuo; Wakabayashi, Hitoshi Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Experimental demonstration of high-gain CMOS inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs. (7th February 2022) Authors: Kawanago, Takamasa; Matsuzaki, Takahiro; Kajikawa, Ryosuke; Muneta, Iriya; Hoshii, Takuya; Kakushima, Kuniyuki; Tsutsui, Kazuo; Wakabayashi, Hitoshi Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Ferroelectric HfO2 Capacitors for Varactor Application in GHz. (8th September 2020) Authors: Lin, Yu Wei; Mizutani, Kazuto; Hoshii, Takuya; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Tsao, Yi-Fan; Huang, Ting-Jui; Hsu, Heng-Tung; Kakushima, Kuniyuki Journal: ECS transactions Issue: Volume 98:Number 3(2020) Page Start: 71 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗