Electrical Characterization of Sputter Deposited AlxSc1-XN Thin Films. (24th April 2020)

• Record Type: Journal Article
• Authors: Tsai, SungLin; Kusafuka, Kazuki; Hoshii, Takuya; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Kakushima, Kuniyuki
• Is Part Of: ECS transactions. Volume 97:Number 3(2020)
• Page Start: 45
• Page End: 48
• Publication Date: 2020-04-24
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09703.0045ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Nitride-based materials including Alx Sc1-x N (ASN) films have also been proven to show a ferroelectricity with a box-like characteristic recently. In this paper, ASN thin films were deposited by RF sputtering with different metal electrode materials, Al, W, TiN and Ni. Leakage current measurements hardly showed difference among the electrode materials. A Schottky barrier height (SBH) at metal/ASN interface was as small as 0.86 eV, irrespective to the electrode material, suggesting a strong Fermi level pinning (FLP). Capacitance-voltage (CV) measurements revealed ferroelectric-like hysteresis behavior for all the electrode materials.