Electrical Characteristics of Atomic Layer Deposited Y-Silicate Dielectrics. (8th September 2020)

• Record Type: Journal Article
• Authors: Ohta, Atsuhiro; Song, Jinhan; Hoshii, Takuya; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Kakushima, Kuniyuki
• Is Part Of: ECS transactions. Volume 98:Number 3(2020)
• Page Start: 153
• Page End: 158
• Publication Date: 2020-09-08
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09803.0153ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Cyclic deposition of Y2 O3 /SiO2 stacked layer by atomic layer deposition (ALD) to form a Y-silicate layer has been examined. The formation of Y-O-Si bonding with a target composition of Y2 Si2 O7 has been confirmed after the deposition. Thanks to its high thermal stability, a low interface state density (Dit ) of 2.3×10 10 cm -2 /eV for Y-silicate/Si capacitor has been achieved. Metal-insulator-metal (MIM) capacitor has revealed a breakdown field of 6.6 MV/cm without annealing. A dielectric constant ( k -value) of 8.5 was obtained from capacitance measurement.