1. Advances on doping strategies for triple-gate finFETs and lateral gate-all-around nanowire FETs and their impact on device performance. (May 2017) Authors: Veloso, A.; De Keersgieter, A.; Matagne, P.; Horiguchi, N.; Collaert, N. Journal: Materials science in semiconductor processing Issue: Volume 62(2017) Page Start: 2 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Erratum to Advances on Doping Strategies for Triple-Gate FinFETs and Lateral Gate-All-Around Nanowire FETs and Their Impact on Device Performance [MATSCI 62 (2017) 2–12]. (1st June 2017) Authors: Veloso, A.; Keersgieter, A. De; Matagne, P.; Horiguchi, N.; Collaert, N. Journal: Materials science in semiconductor processing Issue: Volume 63(2017) Page Start: 303 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Low Frequency Noise Analysis of Impact of Metal Gate Processing on the Gate Oxide Stack Quality. (17th February 2018) Authors: Claeys, C.; He, L.; O'Sullivan, B. J.; Veloso, A.; Horiguchi, N.; Collaert, N.; Simoen, E. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 3(2018) Page Start: Q26 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Low Frequency Noise Analysis of Impact of Metal Gate Processing on the Gate Oxide Stack Quality. (1st January 2018) Authors: Claeys, C.; He, L.; O'Sullivan, B. J.; Veloso, A.; Horiguchi, N.; Collaert, N.; Simoen, E. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 3(2018) Page Start: Q26 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications. (1st January 2016) Authors: Simoen, E.; Ritzenthaler, R.; Cho, M.-J.; Schram, T.; Horiguchi, N.; Aoulaiche, M.; Spessot, A.; Fazan, P.; Claeys, C. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 6(2016) Page Start: N27 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications. (31st March 2016) Authors: Simoen, E.; Ritzenthaler, R.; Cho, M.-J.; Schram, T.; Horiguchi, N.; Aoulaiche, M.; Spessot, A.; Fazan, P.; Claeys, C. Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 6(2016) Page Start: N27 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Low-Frequency Noise Assessment of Work Function Engineering Cap Layers in High-k Gate Stacks. (1st January 2019) Authors: Claeys, C.; Ritzenthaler, R.; Schram, T.; Arimura, H.; Horiguchi, N.; Simoen, E. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 2(2019) Page Start: N25 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Low-Frequency Noise Assessment of Work Function Engineering Cap Layers in High-k Gate Stacks. (5th March 2019) Authors: Claeys, C.; Ritzenthaler, R.; Schram, T.; Arimura, H.; Horiguchi, N.; Simoen, E. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 2(2019) Page Start: N25 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications. (June 2020) Authors: Veloso, A.; Huynh-Bao, T.; Matagne, P.; Jang, D.; Eneman, G.; Horiguchi, N.; Ryckaert, J. Journal: Solid-state electronics Issue: Volume 168(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Processing Technologies for Advanced Ge Devices. (1st January 2017) Authors: Loo, R.; Hikavyy, A. Y.; Witters, L.; Schulze, A.; Arimura, H.; Cott, D.; Mitard, J.; Porret, C.; Mertens, H.; Ryan, P.; Wall, J.; Matney, K.; Wormington, M.; Favia, P.; Richard, O.; Bender, H.; Thean, A.; Horiguchi, N.; Mocuta, D.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 1(2017) Page Start: P14 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗