Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications. (31st March 2016)

• Record Type: Journal Article
• Authors: Simoen, E.; Ritzenthaler, R.; Cho, M.-J.; Schram, T.; Horiguchi, N.; Aoulaiche, M.; Spessot, A.; Fazan, P.; Claeys, C.
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 6(2016)
• Page Start: N27
• Page End: N31
• Publication Date: 2016-03-31
• Subjects: DRAM peripheral transistor -- high-k gate dielectrics -- input/output transistor -- low-frequency noise; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0051606jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The impact of the implementation of a high-κ/metal-gate (HKMG) stack on the oxide integrity of input-output (I/O) pMOSFETs for DRAM periphery applications is investigated by means of low-frequency (LF) noise spectroscopy. It is shown that the predominant 1/f noise is governed by number fluctuations, irrespective of the details of the gate stack. However, the trap density in the 5 nm SiO2 gate oxide, derived from the noise power spectral density is significantly increased by the application of the HKMG and/or Al2 O3 cap and the subsequent diffusion anneal at 900°C.